4H N-type SiC Substrate

Vetek Semiconductor 4H N-type SiC Substrate products have excellent electrical, thermal and mechanical properties, so this product is widely used in the processing of semiconductor devices that require high power, high frequency, high temperature and high reliability.

The breakdown electric field strength of 4H N-type SiC is as high as 2.2-3.0 MV/cm. This product feature allows the manufacture of smaller devices to handle higher voltages, so our 4H N-type SiC Substrate is often used to manufacture MOSFETs, Schottky and JFETs.

The thermal conductivity of 4H N-type SiC Wafer is about 4.9 W/cm·K, which helps to effectively dissipate heat, reduce heat accumulation, extend device life, and is suitable for high power density applications.

Moreover, Vetek Semiconductor 4H N-type SiC Wafer can still have stable electronic performance at temperatures up to 600°C, so it is often used to manufacture high-temperature sensors and is very suitable for extreme environments.

By growing a silicon carbide epitaxial layer on an n-type silicon carbide substrate, the silicon carbide homoepitaxial wafer can be further made into power devices such as SBD, MOSFET, IGBT, etc., which are used in electric vehicles, rail transportation, high-power transmission and transformation, etc.

Vetek Semiconductor continues to pursue higher crystal quality and processing quality to meet customer needs. Currently, both 6-inch and 8-inch products are available. The following are the basic product parameters of 6-inch and 8-inch SIC Substrate:

6 lnch N-type SiC Substrate BASIC PRODUCT SPECIFICATIONS:

8 lnch N-type SiC Substrate BASIC PRODUCT SPECIFICATIONS:

4H N-type SiC Substrate Detection Method and Terminology: