ALD Planetary Susceptor

ALD process,means Atomic Layer Epitaxy process. Vetek Semiconductor and ALD system manufacturers have developed and produced SiC coated ALD Planetary Susceptors that meet the high requirements of the ALD process to evenly distribute the airflow over the substrate. At the same time, Vetek Semiconductor’s high purity CVD SiC coating ensures purity in the process. Welcome to discuss cooperation with us.

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Product Description

As the professional manufacturer, Vetek Semiconductor would like to provide you SiC coated ALD Planetary Susceptor.

The ALD process, known as Atomic Layer Epitaxy, stands as a pinnacle of precision in thin-film deposition technology. Vetek Semiconductor, in collaboration with leading ALD system manufacturers, has pioneered the development and manufacture of cutting-edge SiC-coated ALD Planetary susceptors. These innovative susceptors have been meticulously engineered to surpass the stringent demands of the ALD process, ensuring the uniform distribution of airflow across the substrate with unparalleled accuracy and efficiency.

Moreover, Vetek Semiconductor's commitment to excellence is epitomized by the utilization of high-purity CVD SiC coatings, guaranteeing a level of purity crucial for the success of each deposition cycle. This dedication to quality not only enhances process reliability but also elevates the overall performance and reproducibility of ALD processes in diverse applications.

Advantages of ALD Technology Overview:

Precise Thickness Control: Achieve sub-nanometer film thickness with excellent repeatability by controlling deposition cycles.

Surface Smoothness: Perfect 3D conformality and 100% step coverage ensure smooth coatings that follow the substrate curvature completely.

Wide Applicability: Coatable on various objects from wafers to powders, suitable for sensitive substrates.

Customizable Material Properties: Easy customization of material properties for oxides, nitrides, metals, etc.

Wide Process Window: Insensitivity to temperature or precursor variations, conducive to batch production with perfect coating thickness uniformity.

We cordially invite you to engage in a dialogue with us to explore potential collaborations and partnerships. Together, we can unlock new possibilities and drive innovation in the realm of thin-film deposition technology.

Basic physical properties of CVD SiC coating:

Basic physical properties of CVD SiC coating
Property	Typical Value
Crystal Structure	FCC β phase polycrystalline, mainly (111) oriented
Density	3.21 g/cm³
Hardness	2500 Vickers hardness（500g load）
Grain SiZe	2~10μm
Chemical Purity	99.99995%
Heat Capacity	640 J·kg-1·K-1
Sublimation Temperature	2700℃
Flexural Strength	415 MPa RT 4-point
Young' s Modulus	430 Gpa 4pt bend, 1300℃
Thermal Conductivity	300W·m-1·K-1
Thermal Expansion(CTE)	4.5×10-6K-1