CVD TaC Coating Wafer Carrier

During the semiconductor manufacturing process, VeTek Semiconductor’s CVD TaC Coating Wafer Carrier is a tray used to carry wafers. This product uses a chemical vapor deposition (CVD) process to coat a layer of TaC Coating on the surface of the Wafer Carrier substrate. This coating can significantly improve the oxidation and corrosion resistance of the wafer carrier, while reducing particle contamination during processing. It is an important component in semiconductor processing.

VeTek Semiconductor’s CVD TaC Coating Wafer Carrier is composed of a substrate and a tantalum carbide (TaC) coating.

The thickness of tantalum carbide coatings is typically in the 30 micron range, and TaC has a melting point as high as 3,880°C while providing excellent corrosion and wear resistance, among other properties.

Carrier's base material is made of high-purity graphite or silicon carbide (SiC), and then a layer of TaC (Knoop hardness up to 2000HK) is coated on the surface through a CVD process to improve its corrosion resistance and mechanical strength.

VeTek Semiconductor’s CVD TaC Coating Wafer Carrier usually plays the following roles during the wafer carrying process:

Wafer loading and fixation: The Knoop hardness of tantalum carbide is as high as 2000HK, which can effectively ensure the stable support of the wafer in the reaction chamber. Combined with the good thermal conductivity of TaC (the thermal conductivity is about 21 W/mK), it can make The wafer surface is heated evenly and maintains a uniform temperature distribution, which helps achieve uniform growth of the epitaxial layer.

Reduce particle contamination: The smooth surface and high hardness of CVD TaC coatings help reduce friction between the carrier and the wafer, thereby reducing the risk of particle contamination, which is key to manufacturing high-quality semiconductor devices.

High-temperature stability: During semiconductor processing, actual operating temperatures are typically between 1,200°C and 1,600°C, and TaC coatings have a melting point as high as 3,880°C. Combined with its low thermal expansion coefficient (the thermal expansion coefficient is approximately 6.3 × 10⁻⁶/°C), the carrier can maintain its mechanical strength and dimensional stability under high temperature conditions, preventing the wafer from cracking or stress deformation during processing .

Tantalum carbide (TaC) coating on a microscopic cross-section:

Basic physical properties of CVD TaC coating：