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MOCVD Susceptor with TaC Coating
  • MOCVD Susceptor with TaC CoatingMOCVD Susceptor with TaC Coating

MOCVD Susceptor with TaC Coating

VeTek Semiconductor is a comprehensive supplier involved in the research, development, production, design, and sales of TaC coatings and SiC coating parts. Our expertise lies in the production of state-of-the-art MOCVD Susceptor with TaC Coating, which play a vital role in the LED epitaxy process. We welcome you to discuss with us inquiries and further information.

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Product Description

VeTek Semiconductor is a leading Chinese manufacturer, supplier, and exporter specializing in MOCVD Susceptor with TaC Coating. You are welcomed to come to our factory to buy the latest selling, low price, and high-quality MOCVD Susceptors with TaC Coating. We look forward to cooperating with you.

LED epitaxy faces challenges such as crystal quality control, material selection and matching, structural design and optimization, process control and consistency, and light extraction efficiency. Choosing the right epitaxy wafer carrier material is crucial, and coating it with tantalum carbide (TaC) thin film (TaC coating) provides additional advantages.

When selecting an epitaxy wafer carrier material, several key factors need to be considered:

Temperature tolerance and chemical stability: LED epitaxy processes involve high temperatures and may involve the use of chemicals. Therefore, it is necessary to choose materials with good temperature tolerance and chemical stability to ensure the stability of the carrier in high-temperature and chemical environments.

Surface flatness and wear resistance: The surface of the epitaxy wafer carrier should have good flatness to ensure uniform contact and stable growth of the epitaxy wafer. Additionally, wear resistance is important to prevent surface damage and abrasion.

Thermal conductivity: Choosing a material with good thermal conductivity helps dissipate heat effectively, maintaining a stable growth temperature for the epitaxy layer and improving process stability and consistency.

In this regard, coating the epitaxy wafer carrier with TaC offers the following advantages:

High-temperature stability: TaC coating exhibits excellent high-temperature stability, allowing it to maintain its structure and performance during high-temperature epitaxy processes and providing superior temperature tolerance.

Chemical stability: TaC coating is resistant to corrosion from common chemicals and atmospheres, protecting the carrier from chemical degradation and enhancing its durability.

Hardness and wear resistance: TaC coating possesses high hardness and wear resistance, strengthening the surface of the epitaxy wafer carrier, reducing damage and wear, and prolonging its lifespan.

Thermal conductivity: TaC coating demonstrates good thermal conductivity, aiding in heat dissipation, maintaining a stable growth temperature for the epitaxy layer, and improving process stability and consistency.

Therefore, choosing an epitaxy wafer carrier with a TaC coating helps address the challenges of LED epitaxy, meeting the requirements of high-temperature and chemical environments. This coating offers advantages such as high-temperature stability, chemical stability, hardness and wear resistance, and thermal conductivity, contributing to improved performance, lifespan, and production efficiency of the epitaxy wafer carrier.


Basic physical properties of TaC coating:

Physical properties of TaC coating
Density 14.3 (g/cm³)
Specific emissivity 0.3
Thermal expansion coefficient 6.3 10-6/K
Hardness (HK) 2000 HK
Resistance 1×10-5 Ohm*cm
Thermal stability <2500℃
Graphite size changes -10~-20um
Coating thickness ≥20um typical value (35um±10um)


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Overview of the semiconductor chip epitaxy industry chain:


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