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High Purity Porous Graphite

High Purity Porous Graphite

High Purity Porous Graphite provided by VeTek Semiconductor is an advanced semiconductor processing material. It is made of high-purity carbon material with excellent thermal conductivity, good chemical stability and excellent mechanical strength. This High Purity Porous Graphite plays an important role in the growth process of single crystal SiC. VeTek Semiconductor is committed to providing quality products at competitive prices and looks forward to becoming your long-term partner in China.

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Product Description

High quality VeTek Semiconductor High Purity Porous Graphite is offered by China manufacturer VeTek Semiconductor. Buy VeTek Semiconductor High Purity Porous Graphite which is of high quality directly with low price.

VeTek Semiconductor High Purity Porous Graphite is a masterpiece of heat-resistant materials, able to withstand the extreme temperatures found within semiconductor furnaces. Its superior durability and longevity means fewer replacements and less downtime, resulting in significant cost savings over time.

We manufacture High Purity Porous Graphite from the highest quality carbon sources to ensure minimal impurities and minimal risk of contamination. This high purity means higher yields and superior semiconductor device performance.

Choose High Purity Porous Graphite, where its exceptional thermal stability ensures consistent performance, making it ideal for critical semiconductor processing.

Upgrade your semiconductor manufacturing today to use high purity porous graphite - a material that is changing the way we manufacture tomorrow's technology. Contact us today to discuss your specific needs and embark on a journey of innovation in semiconductor manufacturing. Let's work together to create a superior semiconductor manufacturing future!

Product parameter of the High Purity Porous Graphite

Typical physical properties of porous graphite
ltems Parameter
Bulk density 0.89 g/cc
Compressive strength 8.27 MPa
Bending strength 8.27 MPa
Tensile strength 1.72 MPa
Specific resistance 130Ω-inX10-5
Porosity 50%
Average pore size 70um
Thermal Conductivity 12W/M*K

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Overview of the semiconductor chip epitaxy industry chain:

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