Home > Products > Silicon Carbide Coating > RTA/RTP Process > Rapid Thermal Annealing Susceptor
Rapid Thermal Annealing Susceptor
  • Rapid Thermal Annealing SusceptorRapid Thermal Annealing Susceptor
  • Rapid Thermal Annealing SusceptorRapid Thermal Annealing Susceptor
  • Rapid Thermal Annealing SusceptorRapid Thermal Annealing Susceptor

Rapid Thermal Annealing Susceptor

VeTek Semiconductor is a leading Rapid Thermal Annealing Susceptor manufacturer and innovator in China.We have been specialized in SiC coating material for many years.We offer Rapid Thermal Annealing Susceptor with high quality,high temperature resistance,super thin.We welcome you to visit our factory in China.

Send Inquiry

Product Description

VeTek Semiconductor Rapid Thermal Annealing Susceptor is with high quality and long lifetime,welcome to inquiry us.

The Rapid Thermal Anneal (RTA) is a crucial subset of Rapid Thermal Processing used in semiconductor device fabrication. It involves the heating of individual wafers to modify their electrical properties through various targeted heat treatments. The RTA process enables the activation of dopants, alteration of film-to-film or film-to-wafer substrate interfaces, densification of deposited films, modification of grown film states, repair of ion implantation damage, dopant movement, and driving dopants between films or into the wafer substrate.

VeTek Semiconductor product, Rapid Thermal Annealing Susceptor, plays a vital role in the RTP process. It is constructed using high-purity graphite material with a protective coating of inert silicon carbide (SiC). The SiC-coated silicon substrate can withstand temperatures up to 1100°C, ensuring reliable performance even under extreme conditions. The SiC coating provides excellent protection against gas leakage and particle shedding, ensuring the longevity of the product.

To maintain precise temperature control, the chip is encapsulated between two high-purity graphite components coated with SiC. Accurate temperature measurements can be obtained through integrated high-temperature sensors or thermocouples in contact with the substrate.

Basic physical properties of CVD SiC coating:

Basic physical properties of CVD SiC coating
Property Typical Value
Crystal Structure FCC β phase polycrystalline, mainly (111) oriented
Density 3.21 g/cm³
Hardness 2500 Vickers hardness(500g load)
Grain SiZe 2~10μm
Chemical Purity 99.99995%
Heat Capacity 640 J·kg-1·K-1
Sublimation Temperature 2700℃
Flexural Strength 415 MPa RT 4-point
Young' s Modulus 430 Gpa 4pt bend, 1300℃
Thermal Conductivity 300W·m-1·K-1
Thermal Expansion(CTE) 4.5×10-6K-1

VeTek Semiconductor Production Shop

Overview of the semiconductor chip epitaxy industry chain:

Hot Tags: Rapid Thermal Annealing Susceptor, China, Manufacturer, Supplier, Factory, Customized, Buy, Advanced, Durable, Made in China

Related Category

Send Inquiry

Please feel free to give your inquiry in the form below. We will reply you in 24 hours.
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept