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SiC Coated Graphite Crucible Deflector
  • SiC Coated Graphite Crucible DeflectorSiC Coated Graphite Crucible Deflector
  • SiC Coated Graphite Crucible DeflectorSiC Coated Graphite Crucible Deflector

SiC Coated Graphite Crucible Deflector

VeTek Semiconductor have many years of experience in production of high quality SiC coated graphite crucible deflector. We have own laboratory for material research and development, can support your custom designs with superior quality. we welcome you to visit our factory for more discussion.

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Product Description

VeTek Semiconducotr is a professional China SiC coated graphite crucible deflector manufacturer and supplier. The SiC coated graphite crucible deflector is a crucial component in monocrystalline furnace equipment, tasked with smoothly guiding the molten material from the crucible to the crystal growth zone, ensuring the quality and shape of monocrystal growth.

The functions of our SiC coated graphite crucible deflector are:

Flow Control: It directs the flow of molten silicon during the Czochralski process, ensuring uniform distribution and controlled movement of the molten silicon to promote crystal growth.

Temperature Regulation: It helps to regulate the temperature distribution within the molten silicon, ensuring optimal conditions for crystal growth and minimizing temperature gradients that could affect the quality of the monocrystalline silicon.

Contamination Prevention: By controlling the flow of molten silicon, it helps prevent contamination from the crucible or other sources, maintaining the high purity required for semiconductor applications.

Stability: The deflector contributes to the stability of the crystal growth process by reducing turbulence and promoting a steady flow of molten silicon, which is crucial for achieving uniform crystal properties.

Facilitation of Crystal Growth: By guiding the molten silicon in a controlled manner, the deflector facilitates the growth of a single crystal from the molten silicon, which is essential for producing high-quality monocrystalline silicon wafers used in semiconductor manufacturing.

Product parameter of the SiC Coated Graphite Crucible Deflector

Physical properties of isostatic graphite
Property Unit Typical Value
Bulk Density g/cm³ 1.83
Hardness HSD 58
Electrical Resistivity μΩ.m 10
Flexural Strength MPa 47
Compressive Strength MPa 103
Tensile Strength MPa 31
Young' s Modulus GPa 11.8
Thermal Expansion(CTE) 10-6K-1 4.6
Thermal Conductivity W·m-1·K-1 130
Average Grain Size μm 8-10
Porosity % 10
Ash Content ppm ≤10 (after purified)

Note: Before coating, we will do first purification, after coating, will do second purification.

Basic physical properties of CVD SiC coating
Property Typical Value
Crystal Structure FCC β phase polycrystalline, mainly (111) oriented
Density 3.21 g/cm³
Hardness 2500 Vickers hardness(500g load)
Grain SiZe 2~10μm
Chemical Purity 99.99995%
Heat Capacity 640 J·kg-1·K-1
Sublimation Temperature 2700℃
Flexural Strength 415 MPa RT 4-point
Young' s Modulus 430 Gpa 4pt bend, 1300℃
Thermal Conductivity 300W·m-1·K-1
Thermal Expansion(CTE) 4.5×10-6K-1

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