VeTek Semiconductor is a professional manufacturer and supplier, who is dedicated to providing high-quality MOCVD Epitaxial Susceptor for 4" Wafer. with rich industry experience and a professional team, we are able to deliver expert and efficient solutions to our clients.
VeTek Semiconductor is a professional leader China MOCVD Epitaxial Susceptor for 4" wafer manufacturer with high quality and reasonable price. Welcome to contact us.The MOCVD Epitaxial Susceptor for 4" wafer is a critical component in the metal-organic chemical vapor deposition (MOCVD) process, which is widely used for the growth of high-quality epitaxial thin films, including gallium nitride (GaN), aluminum nitride (AlN), and silicon carbide (SiC). The susceptor serves as a platform to hold the substrate during the epitaxial growth process and plays a crucial role in ensuring uniform temperature distribution, efficient heat transfer, and optimal growth conditions.
MOCVD Epitaxial Susceptor for 4" wafer is typically made of high-purity graphite, silicon carbide, or other materials with excellent thermal conductivity, chemical inertness, and resistance to thermal shock.
MOCVD epitaxial susceptors find applications in various industries, including:
Power electronics: growth of GaN-based high-electron-mobility transistors (HEMTs) for high-power and high-frequency applications.
Optoelectronics: growth of GaN-based light-emitting diodes (LEDs) and laser diodes for efficient lighting and display technologies.
Sensors: growth of AlN-based piezoelectric sensors for pressure, temperature, and acoustic wave detection.
High-temperature electronics: growth of SiC-based power devices for high-temperature and high-power applications.
Physical properties of isostatic graphite | ||
Property | Unit | Typical Value |
Bulk Density | g/cm³ | 1.83 |
Hardness | HSD | 58 |
Electrical Resistivity | μΩ.m | 10 |
Flexural Strength | MPa | 47 |
Compressive Strength | MPa | 103 |
Tensile Strength | MPa | 31 |
Young' s Modulus | GPa | 11.8 |
Thermal Expansion(CTE) | 10-6K-1 | 4.6 |
Thermal Conductivity | W·m-1·K-1 | 130 |
Average Grain Size | μm | 8-10 |
Porosity | % | 10 |
Ash Content | ppm | ≤10 (after purified) |
Note: Before coating, we will do first purification, after coating, will do second purification.
Basic physical properties of CVD SiC coating | |
Property | Typical Value |
Crystal Structure | FCC β phase polycrystalline, mainly (111) oriented |
Density | 3.21 g/cm³ |
Hardness | 2500 Vickers hardness(500g load) |
Grain SiZe | 2~10μm |
Chemical Purity | 99.99995% |
Heat Capacity | 640 J·kg-1·K-1 |
Sublimation Temperature | 2700℃ |
Flexural Strength | 415 MPa RT 4-point |
Young' s Modulus | 430 Gpa 4pt bend, 1300℃ |
Thermal Conductivity | 300W·m-1·K-1 |
Thermal Expansion(CTE) | 4.5×10-6K-1 |