VeTek Semiconductor is a professional manufacturer and supplier, dedicated to providing high-quality Silicon-based GaN Epitaxial Susceptor. The susceptor semiconductor is used in VEECO K465i GaN MOCVD system, high purity, high temperature resistance, corrosion resistance, welcome to inquire and cooperate with us!
VeTek Semiconducto is a professional leader China Silicon-based GaN Epitaxial Susceptor manufacturer with high quality and reasonable price. Welcome to contact us.
VeTek Semiconductor Silicon-based GaN Epitaxial Susceptor is The Silicon-based GaN Epitaxial susceptor is a key component in the VEECO K465i GaN MOCVD system to support and heat the Silicon substrate of the GaN material during epitaxial growth.
VeTek Semiconductor Silicon-based GaN Epitaxial Susceptor adopts high purity and high quality graphite material as the substrate, which has good stability and heat conduction in the epitaxial growth process. This substrate is able to withstand high temperature environments, ensuring the stability and reliability of the epitaxial growth process.
In order to improve the efficiency and quality of epitaxial growth, the surface coating of this susceptor for uses high-purity and high-uniformity silicon carbide. Silicon carbide coating has excellent high temperature resistance and chemical stability, and can effectively resist the chemical reaction and corrosion in the epitaxial growth process.
The design and material selection of this wafer susceptor are designed to provide optimal thermal conductivity, chemical stability and mechanical strength to support high quality GaN epitaxy growth. Its high purity and high uniformity ensure consistency and uniformity during growth, resulting in a high-quality GaN film.
In general, silicon-based GaN Epitaxial susceptor is a high-performance product designed specifically for the VEECO K465i GaN MOCVD system by using a high purity, high quality graphte substrate and a high purity, high uniformity silicon carbide coating. It provides stability, reliability and high quality support for the epitaxial growth process.
Physical properties of isostatic graphite | ||
Property | Unit | Typical Value |
Bulk Density | g/cm³ | 1.83 |
Hardness | HSD | 58 |
Electrical Resistivity | μΩ.m | 10 |
Flexural Strength | MPa | 47 |
Compressive Strength | MPa | 103 |
Tensile Strength | MPa | 31 |
Young' s Modulus | GPa | 11.8 |
Thermal Expansion(CTE) | 10-6K-1 | 4.6 |
Thermal Conductivity | W·m-1·K-1 | 130 |
Average Grain Size | μm | 8-10 |
Porosity | % | 10 |
Ash Content | ppm | ≤10 (after purified) |
Basic physical properties of CVD SiC coating | |
Property | Typical Value |
Crystal Structure | FCC β phase polycrystalline, mainly (111) oriented |
Density | 3.21 g/cm³ |
Hardness | 2500 Vickers hardness(500g load) |
Grain SiZe | 2~10μm |
Chemical Purity | 99.99995% |
Heat Capacity | 640 J·kg-1·K-1 |
Sublimation Temperature | 2700℃ |
Flexural Strength | 415 MPa RT 4-point |
Young' s Modulus | 430 Gpa 4pt bend, 1300℃ |
Thermal Conductivity | 300W·m-1·K-1 |
Thermal Expansion(CTE) | 4.5×10-6K-1 |
Note: Before coating, we will do first purification, after coating, will do second purification.