VeTek Semiconductor is a leading 8 Inch Halfmoon Part for LPE Reactor manufacturer and innovator in China.We have been specialized in SiC coating material for many years.We offer a 8 Inch Halfmoon Part for LPE Reactor designed specifically for LPE SiC epitaxy reactor. This halfmoon part a versatile and efficient solution for semiconductor manufacturing with its optimal size, compatibility, and high productivity.We welcome you to visit our factory in China.
As the professional manufacturer, VeTek Semiconductor would like to provide you high quality 8 Inch Halfmoon Part for LPE Reactor.
VeTek Semiconductor 8 inch halfmoon part for LPE reactor is an essential component utilized in semiconductor manufacturing processes, particularly in SiC epitaxial equipment. VeTek Semiconductor employs a patented technology to produce 8 inch halfmoon part for LPE reactor, ensuring they possess exceptional purity, uniform coating, and outstanding longevity. Additionally, these parts exhibit remarkable chemical resistance and thermal stability properties.
The main body of the 8 inch halfmoon part for LPE reactor is made from high-purity graphite, which provides excellent thermal conductivity and mechanical stability. High-purity graphite is chosen for its low impurity content, ensuring minimal contamination during the epitaxial growth process. Its robustness allows it to withstand the demanding conditions within the LPE reactor.
VeTek Semiconductor SiC Coated Graphite Halfmoon Parts are manufactured with the utmost precision and attention to detail. The high purity of the materials used guarantees superior performance and reliability in semiconductor manufacturing. The uniform coating on these parts ensures consistent and efficient operation throughout their service life.
One of the key advantages of our SiC Coated Graphite Halfmoon Parts is their excellent chemical resistance. They can withstand the corrosive nature of the semiconductor manufacturing environment, ensuring long-lasting durability and minimizing the need for frequent replacements. Moreover, their exceptional thermal stability allows them to maintain their structural integrity and functionality under high-temperature conditions.
Our SiC Coated Graphite Halfmoon Parts have been meticulously designed to meet the stringent requirements of SiC epitaxial equipment. With their reliable performance, these parts contribute to the success of epitaxial growth processes, enabling the deposition of high-quality SiC films.
Basic physical properties of CVD SiC coating | |
Property | Typical Value |
Crystal Structure | FCC β phase polycrystalline, mainly (111) oriented |
Density | 3.21 g/cm³ |
Hardness | 2500 Vickers hardness(500g load) |
Grain SiZe | 2~10μm |
Chemical Purity | 99.99995% |
Heat Capacity | 640 J·kg-1·K-1 |
Sublimation Temperature | 2700℃ |
Flexural Strength | 415 MPa RT 4-point |
Young' s Modulus | 430 Gpa 4pt bend, 1300℃ |
Thermal Conductivity | 300W·m-1·K-1 |
Thermal Expansion(CTE) | 4.5×10-6K-1 |