VeTek Semiconductor is a professional manufacturer and supplier, dedicated to providing high-quality GaN Epitaxial Graphite susceptor For G5. we have established long-term and stable partnerships with numerous well-known companies at home and abroad, earning the trust and respect of our customers.
VeTek Semiconductor is a professional China GaN Epitaxial Graphite susceptor For G5 manufacturer and supplier. The GaN Epitaxial Graphite susceptor For G5 is a critical component used in the Aixtron G5 metal-organic chemical vapor deposition (MOCVD) system for the growth of high-quality gallium nitride (GaN) thin films,it plays a crucial role in ensuring uniform temperature distribution, efficient heat transfer, and minimal contamination during the growth process.
-High purity: The susceptor is made from highly pure graphite with CVD coating, minimizing contamination of the growing GaN films.
-Excellent thermal conductivity: Graphite's high thermal conductivity (150-300 W/(m·K)) ensures uniform temperature distribution across the susceptor, leading to consistent GaN film growth.
-Low thermal expansion: The susceptor's low thermal expansion coefficient minimizes thermal stress and cracking during the high-temperature growth process.
-Chemical inertness: Graphite is chemically inert and does not react with the GaN precursors, preventing unwanted impurities in the grown films.
-Compatibility with Aixtron G5: The susceptor is specifically designed for use in the Aixtron G5 MOCVD system, ensuring proper fit and functionality.
High-brightness LEDs: GaN-based LEDs offer high efficiency and long lifespan, making them ideal for general lighting, automotive lighting, and display applications.
High-power transistors: GaN transistors offer superior performance in terms of power density, efficiency, and switching speed, making them suitable for power electronics applications.
Laser diodes: GaN-based laser diodes offer high efficiency and short wavelengths, making them ideal for optical storage and communication applications.
Physical properties of isostatic graphite | ||
Property | Unit | Typical Value |
Bulk Density | g/cm³ | 1.83 |
Hardness | HSD | 58 |
Electrical Resistivity | μΩ.m | 10 |
Flexural Strength | MPa | 47 |
Compressive Strength | MPa | 103 |
Tensile Strength | MPa | 31 |
Young' s Modulus | GPa | 11.8 |
Thermal Expansion(CTE) | 10-6K-1 | 4.6 |
Thermal Conductivity | W·m-1·K-1 | 130 |
Average Grain Size | μm | 8-10 |
Porosity | % | 10 |
Ash Content | ppm | ≤10 (after purified) |
Note: Before coating, we will do first purification, after coating, will do second purification.
Basic physical properties of CVD SiC coating | |
Property | Typical Value |
Crystal Structure | FCC β phase polycrystalline, mainly (111) oriented |
Density | 3.21 g/cm³ |
Hardness | 2500 Vickers hardness(500g load) |
Grain SiZe | 2~10μm |
Chemical Purity | 99.99995% |
Heat Capacity | 640 J·kg-1·K-1 |
Sublimation Temperature | 2700℃ |
Flexural Strength | 415 MPa RT 4-point |
Young' s Modulus | 430 Gpa 4pt bend, 1300℃ |
Thermal Conductivity | 300W·m-1·K-1 |
Thermal Expansion(CTE) | 4.5×10-6K-1 |