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Silicon Carbide Epitaxy Wafer Carrier
  • Silicon Carbide Epitaxy Wafer CarrierSilicon Carbide Epitaxy Wafer Carrier
  • Silicon Carbide Epitaxy Wafer CarrierSilicon Carbide Epitaxy Wafer Carrier

Silicon Carbide Epitaxy Wafer Carrier

VeTek Semiconductor is a leading customized Silicon Carbide Epitaxy Wafer Carrier supplier in China.We have been specialized in advanced material more than 20 years.We offer a Silicon Carbide Epitaxy Wafer Carrier for carrying SiC substrate, growing SiC epitaxy layer in SiC epitaxial reactor. This Silicon Carbide Epitaxy Wafer Carrier is an important SiC coated part of halfmoon part, high temperature resistance, oxidation resistance, wear resistance. We welcome you to visit our factory in China.

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Product Description

As the professional manufacturer, we would like to provide you high quality Silicon Carbide Epitaxy Wafer Carrier.

VeTek Semiconductor Silicon Carbide Epitaxy Wafer Carriers are specifically designed for the SiC epitaxial chamber. They have a wide range of applications and are compatible with various equipment models.

Application Scenario:

VeTek Semiconductor Silicon Carbide Epitaxy Wafer Carriers are primarily used in the growth process of SiC epitaxial layers. These accessories are placed inside the SiC epitaxy reactor, where they come into direct contact with SiC substrates. The critical parameters for epitaxial layers are thickness and doping concentration uniformity. Therefore, we assess the performance and compatibility of our accessories by observing data such as film thickness, carrier concentration, uniformity, and surface roughness.

Usage:

Depending on the equipment and process, our products can achieve at least 5000 um of epitaxial layer thickness in a 6-inch half moon configuration. This value serves as a reference, and actual results may vary.

Compatible Equipment Models:

VeTek Semiconductor silicon carbide coated graphite parts are compatible with various equipment models, including LPE, NAURA, JSG, CETC, NASO TECH, and others.


Basic physical properties of CVD SiC coating:

Basic physical properties of CVD SiC coating
Property Typical Value
Crystal Structure FCC β phase polycrystalline, mainly (111) oriented
Density 3.21 g/cm³
Hardness 2500 Vickers hardness(500g load)
Grain SiZe 2~10μm
Chemical Purity 99.99995%
Heat Capacity 640 J·kg-1·K-1
Sublimation Temperature 2700℃
Flexural Strength 415 MPa RT 4-point
Young' s Modulus 430 Gpa 4pt bend, 1300℃
Thermal Conductivity 300W·m-1·K-1
Thermal Expansion(CTE) 4.5×10-6K-1



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Overview of the semiconductor chip epitaxy industry chain:


Hot Tags: Silicon Carbide Epitaxy Wafer Carrier, China, Manufacturer, Supplier, Factory, Customized, Buy, Advanced, Durable, Made in China

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